IRF820 MOSFET Pinout, Equivalent, Features, Applications and Other Details
IRF820 is an N Channel power MOSFET designed to use commercial applications. The transistor has many features such as fast switching, low RDS(on), high VDSS etc. In this post we are going to understand IRF820 MOSFET pinout, equivalent, features, applications and other details about this device.
Features / Technical Specifications:
- Package Type: TO-220AB
- Transistor Type: N Channel
- Max Voltage Applied From Drain to Source: 500V
- Max Gate to Source Voltage Should Be: ±20V
- Max Continues Drain Current is : 2.5A
- Max Pulsed Drain Current is: 10A
- Max Power Dissipation is: 80W
- Max Drain to Source Resistance in ON State (RDS on): 3.0Ω
- Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
Replacement and Equivalent:
IRF821, IRF822, IRF823, BUZ74, IRF420(TO-204AA Package), IRF421(TO-204AA Package), IRF422(TO-204AA Package), IRF423(TO-204AA Package), 2SK1153, 2SK1154, 2SK1862, 2SK1863, IRF820FI, IRF820S, , IRFI820G, IRFS820, IRFS821, RFP3N45, RFP3N50, , BUK444-500B, BUK454-500B.
IRF820 MOSFET Explained / Description:
IRF820 is an N Channel MOSFET with many features, the transistor is available in TO-220 package and capable to drive load voltage or drain to source voltage of upto 500V. It is primarily designed to use in variety of high speed applications, SMPS, DC to AC conversion, UPS, motor driver circuits, relay drivers, etc. But it is not limited to these applications and can also be used in wide variety of other applications.
The transistor is packed with many features which are as follow:
Robust and High Voltage Capability
The MOSFET is robust and can be used in high voltage applications and can drive load of upto 500V.
Switching Speed of Nano Seconds
It has nano seconds switching speed which makes it an ideal device to use in applications which requires very high speed switching.
It Has Simple Drive Requirements
It has simple drive requirements means it can easily be operated from low voltages.
Other features are repetitive avalanche rated, dynamic dv/dt rating, ease of paralleling etc.
Looking at the specs of the MOSFET it has 500V drain to source voltage limit which is quite useful, max continuous drain current / load current current it can handle is 2.5A, max pulsed current is 10A, and max power dissipation is 80W.
Where and How to Use:
As mentioned above the primary uses of the transistor are high speed applications, UPS, motor driver circuits, SMPS, DC to AC conversion, relay drivers but it can also be used in applications which requires high voltage load drive and also in many other applications which falls under its ratings.
Applications:
Switching Mode Power Supplies
Uninterruptible Power Supplies
DC to AC Converters
Motor Driving Applications
Safe Operating Guidelines / Absolute Maximum Ratings:
To get long term good and stable performance with this MOSFET read the following guidelines:
- It suggested to always use the MOSFET 20% from its absolute maximum ratings. Using the device on its full ratings may result in damage, short life and not provide stable performance.
- Maximum continuous drain current is 2.5A therefore do not drive load of more than 2A.
- The maximum drain to source voltage is 500V therefore do not drive load or more than 400V.
- Using a suitable heatsink it must.
- The operating or storage temperature should be from -55°C to +150 °C.
Datasheet:
To download the datasheet just copy and paste the below link into your browser.
https://cdn.datasheetspdf.com/pdf-down/I/R/F/IRF820_InternationalRectifier.pdf
