KSA1381 Transistor Pinout, Equivalent, Features, Applications, and Other Details

KSA1381 is a PNP transistor available in TO-126 package. In this post we are going to explore KSA1381 transistor pinout, equivalent, features, applications, and other details about this device.


KSA1381 Transistor Pinout, Equivalent, Features, Applications, and Other Details




Features / Technical Specifications

  • Package Type: TO-126
  • Transistor Type: NPN
  • Max Collector Current(IC): -100mA
  • Max Collector-Emitter Voltage (VCE): -300V
  • Max Collector-Base Voltage (VCE): -300V
  • Max Emitter-Base Voltage (VBE): –5V
  • Max Collector Dissipation (Pc): 7W
  • Max Transition Frequency (fT): 150 MHz
  • Minimum & Maximum DC Current Gain (hFE): 40 to 320
  • Max Storage, Operating & Junction temperature range: -55 to +150 Centigrade


NPN Complementary:

NPN complimentary of KSA1381 is KSC3503


Replacement and Equivalent

KSA1156, 2SA1486, KTA1381, 2SA1381, 2SA1480


KSA1381 Transistor Explained / Description

If you are looking for a high voltage and low current PNP transistor then KSA1381 might be a good choice. The transistor is available in TO-126 package and designed to use in video output and CRT applications. But it is not limited to these applications and due to some of its features and characteristics, it can also be used in other applications like it has the transition frequency of 150MHz which makes it capable to use in high frequency and RF circuits. It has a maximum collector-emitter voltage of upto -300V which makes it ideal to use in variety of high voltage applications. Some other features of the transistor are high speed switching, low collector saturation voltage etc.

Now understanding the characteristics of the transistor, the absolute maximum ratings of the transistor are collector-emitter voltage of -300V, emitter-base voltage of -5V, continuous collector current is 100mA and total power dissipation is 7W.

Characteristics of the transistor are DC current gain of 40 to 320, collector cutoff current is 0.1uA, collector-emitter saturation voltage is 0.6V max.

The transistor is available in four different versions according to its hFE or DC current gain and can be determined with the help the alphabet written after the part number. If that alphabet is C then the DC current gain or hFE will be 40 to 80, if “D” then 60 to 120, if “E” then 100 to 200 and if that alphabet is “F” then the gain will be 160 to 320.


Where & How to Use

KSA1381 can be used in high voltage circuits, telephone circuits, amplifier circuits, RF circuits and variety of general purpose circuits. Using procedure of this transistor is same as other PNP transistors. First of all check the pin configuration of the transistor. After that connect the “Base” of the transistor to the input signal, connect “Emitter” to the positive rail of the circuit and “Collector” with the positive side of the load and the negative side of the load will be connected with the ground. A base resistor is necessary to use with the transistor to provide the required current at the base. If the load you are connecting with the transistor is a limited current device for example LED, microcontroller or a sensor etc. (These devices will get burned form inside when we supply them more current then their max limit) so it is important to drive these type of loads through a resistor which will limit the maximum current going in them.



Radio and RF Applications under 150MHz

General purpose amplifiers

Low current switching

Audio amplifier and other audio related applications

Voltage amplifiers

Current source

Radio and RF Applications under 150MHz

Any general purpose applications that falls under its ratings


Safe Operating Guidelines

To safely operate the transistor and get good and stable performance it is important to use the transistor under its limit or absolute max ratings. You should stay at least 20% below from the max ratings.

  • So the maximum collector current of the transistor is 100mA, so do not drive load of more than 80mA.
  • The maximum collector to emitter voltage is -300V therefore the drived load should not be more than 240V.
  • Use a suitable heatsink with the transistor.
  • And store of operate the transistor at temperatures above -55°C and below +150 °C.



To Download the datasheet just copy and paste the below link in your browser.


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